MPSH10
NPNEPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
Pc
RATINGS
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Total Power Dissipation
Collector Current
30
25
V
3
350
V
mW
mA
°C
°C
Ic
50
Junction Temperature
Storage Temperature
TJ
150
TSTG
-55 ~ +150
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage BVCEO Ic=1mA
SYMBOL
BVCBO Ic=100μA
TEST CONDITIONS
MIN
30
TYP
MAX
UNIT
V
25
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
BVEBO IE=10μA
3
V
ICBO
IEBO
VCB=25V
VEB=2V
100
100
500
950
nA
nA
mV
mV
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
DC Current Gain
VCE(SAT) IC=4mA, IB=400μA
VBE(ON) VCE=10V, IC=4mA
hFE
COB
fT
VCE=10V, IC=4mA
60
Output Capacitace
VCB=10V, f=1MHZ
0.7
pF
Current Gain Bandwidth Product
VCE=10V, IC=4mA, f=100MHZ
650
MHZ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
60-100
90-130
120 -200
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R201-022,Ea
www.unisonic.com.tw
UTC [ Unisonic Technologies ]
