MMBTA42
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
NPN SILICON TRANSISTOR
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
300
V
Collector-Emitter Voltage
V
CEO
300
V
Emitter-Base Voltage
V
EBO
6
V
Collector Dissipation (T
A
=25℃)
P
C
350
mW
Collector Current
I
C
500
mA
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
J
=25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Current Gain Bandwidth Product
Collector Base Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
V
BE(SAT)
I
CBO
I
EBO
h
FE
f
T
C
cb
TEST CONDITIONS
Ic=100μA, I
E
=0
Ic=1mA, I
B
=0
I
E
=100μA, Ic=0
Ic=20mA, I
B
=2mA
Ic=20mA, I
B
=2mA
V
CB
=200V, I
E
=0
V
BE
=6V, Ic=0
V
CE
=10V, Ic=1mA
V
CE
=10V, Ic=10mA
V
CE
=10V, Ic=30mA
V
CE
=20V, Ic=10mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
MIN
300
300
6
TYP
MAX
UNIT
V
V
V
V
V
nA
nA
0.2
0.90
100
100
80
80
80
50
300
3
MHz
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-004,C
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