MMBTA06
NPN SILICON TRANSISTOR
ꢀ
TYPICAL CHARACTERISTICS
Capacitance
Current-Gain Bandwidth Product
80
60
300
200
TJ=25℃
40
VCE=2.0V
Cibo
TJ=25℃
20
100
70
Cobo
10
8.0
50
6.0
4.0
30
0.1 0.2 0.5 10 20 5.0 10 20 50100
Reverse Voltage, VR (V)
2.0 3.05.07.010 20 30 50 70100200
Collector Current, IC (mA)
Active-Region Safe Operating Area
Switching Time
1.0K
700
500
1.0K
700
500
100µs
1.0ms
TC=25℃
ts
300
200
300
200
1.0s
tf
TA=25℃
100
70
100
70
50
50
MMBTA05
VCC=40V
IC/IB=10
IB1=IB2
MMBTA06
30
20
30
20
tr
Current Limit
Thermal Limit
Second Breakdown Limit
TJ=25℃
td@VBE(off)=0.5V
10
10
5.0 7.010 20 30 50 70100 300 500
Collector Current, IC (mA)
1.0 2.0 3.0 5.07.010 20 30 50 70100
Collector-Emitter Voltage, VCE (V)
“ON” Voltages
DC Current Gain
1.0
400
TJ=125℃
TJ=125℃
VCE=1.0V
VBE(SAT)@IC/IB=10
0.8
0.6
0.4
200
25℃
VBE(ON)@VCE=1.0V
100
80
-55℃
VCE(SAT)@IC/IB=10
0.2
0
60
40
0.5 1.0 2.0 5.0 10 20 50 100200 500
0.5 1.0 2.03.0 5.010 20 3050100200300500
Collector Current, IC (mA)
Collector Current, IC(mA)
UNISONIC TECHNOLOGIES CO., LTD
4 of 5
QW-R206-041,B
www.unisonic.com.tw
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