MMBT4403
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-40
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5
V
Collector Current-Continuous
Total Device Dissipation
Derate above 25°C
-600
mA
mW
mW/°C
°C
350
PC
2.8
Junction Temperature
Storage Temperature
TJ
+150
-55 ~ +150
TSTG
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA (Ta=25°C, unless otherwise specified)
CHARACTERISTIC
Junction to Ambient
SYMBOL
RATINGS
357
UNIT
θJA
°C /W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
BVCEO IC=-1mA, IB=0
-40
Collector-Base Breakdown Voltage BVCBO IC=-0.1mA, IE=0
-40
-5
V
V
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
BVEBO IE=-0.1mA, IC=0
ICEX VCE=-35V, VEB=-0.4V
IBEX
-0.1
-0.1
µA
µA
VCE=-35V, VBE=-0.4V
ON CHARACTERISTICS*
hFE1
hFE2
hFE3
hFE4
hFE5
VCE=-1V,IC=-0.1mA
30
60
VCE=-1V,IC=-1mA
DC Current Gain
VCE=-1V,IC=-10mA
100
100
20
VCE=-2V, IC=-150mA (Note)
VCE=-2V, IC=-500mA (Note)
300
VCE(SAT1) IC=-150mA, IB=-15mA
CE(SAT2) IC=-500mA, IB=-50mA
VBE(SAT1) IC=-150mA, IB=-15mA(Note)
BE(SAT2) IC=-500mA, IB=-50mA
-0.4
-0.75
-0.95
-1.3
Collector-Emitter Saturation
Voltage
V
V
V
-0.75
200
Base-Emitter Saturation Voltage
V
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
fT
VCE=-10V, IC=-20mA, f=100MHz
MHz
pF
CCB
CEB
hIE
VCB=-10V, IE=0, f=140kHz
VBE=-0.5V, IC=0, f=140kHz
VCE=-10V, IC=-1mA, f=1kHz
VCE=-10V, IC=-1mA, f=1kHz
VCE=-10V, IC=-1mA, f=1kHz
VCE=-10V, IC=-1mA, f=1kHz
8.5
30
pF
1.5
0.1
60
15
kΩ
×10-4
Voltage Feedback Ratio
Small-Signal Current Gain
Output Admittance
hRE
hFE
hOE
8
500
100
1.0
µmbos
SWITCHING CHARACTERISTICS
Delay Time
tD
tR
tS
tF
15
20
VCC=-30V, IC=-150mA IB1=-15mA
ns
ns
Rise Time
Storage Time
VCC=-30V, IC=-150mA
IB1= IB2=-15mA
225
30
Fall Time
Note: Pulse test: Pulse Width≤300μs, Duty Cycle≤2%
UNISONIC TECHNOLOGIES CO., LTD
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www.unisonic.com.tw
QW-R206-034.F
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