MMBT4403
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified)
RATINGS
UNIT
40
V
40
V
5
V
600
mA
350
mW
P
C
2.8
mW/℃
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
SYMBOL
θ
JA
RATINGS
357
UNIT
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Breakdown
Voltage (Note)
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Base Cut-off Current
ON CHARACTERISTICS*
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CEX
I
BEX
h
FE1
h
FE2
h
FE3
h
FE4
h
FE5
V
CE(SAT1)
V
CE(SAT2
)
V
BE(SAT1)
V
BE(SAT2
)
TEST CONDITIONS
I
C
=1mA, I
B
=0
Ic=0.1mA, I
E
=0
I
E
=0.1mA, I
C
=0
V
CE
=35V, V
EB
=0.4V
V
CE
=35V, V
BE
=0.4V
V
CE
=1V,I
C
=0.1mA
V
CE
=1V,I
C
=1mA
V
CE
=1V,I
C
=10mA
V
CE
=2V, I
C
=150mA (Note)
V
CE
=2V, I
C
=500mA (Note)
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA(Note)
I
C
=500mA, I
B
=50mA
200
8.5
30
15
8
500
100
15
20
225
30
MIN
40
40
5
0.1
0.1
30
60
100
100
20
TYP
MAX
UNIT
V
V
V
µA
µA
DC Current Gain
300
0.4
0.75
0.95
1.3
V
V
V
V
MHz
pF
pF
kΩ
×10
-4
µmbos
ns
ns
ns
ns
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
0.75
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
V
CE
=10V, I
C
=20mA, f=100MHz
Collector-Base Capacitance
Ccb
V
CB
=10V, I
E
=0, f=140kHz
Emitter-Base Capacitance
Ceb
V
BE
=0.5V, I
C
=0, f=140kHz
Input Impedance
h
IE
V
CE
=10V, I
C
=1mA, f=1kHz
Voltage Feedback Ratio
h
RE
V
CE
=10V, I
C
=1mA, f=1kHz
Small-Signal Current Gain
h
FE
V
CE
=10V, I
C
=1mA, f=1kHz
Output Admittance
h
OE
V
CE
=10V, I
C
=1mA, f=1kHz
SWITCHING CHARACTERISTICS
Delay Time
t
D
V
CC
=30V, I
C
=150mA I
B
1=15mA
Rise Time
t
R
Storage Time
t
S
V
CC
=30V, I
C
=150mA
I
B1
= I
B2
=15mA
Fall Time
t
F
Note Pulse test: Pulse Width≤300µs, Duty Cycle≤2%
1.5
0.1
60
1.0
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-034,C
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