MMBT3904
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( T
A
=25°С, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Collector Dissipation
P
C
350
mW
Junction Temperature
T
J
+150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
V
CBO
V
CEO
V
EBO
V
CE(SAT)
1
Collector-Emitter Saturation Voltage (Note)
V
CE(SAT)
2
V
BE(SAT)
1
Base-Emitter Saturation Voltage (Note)
V
BE(SAT)
2
Collector Cut-Off Current
I
CEX
Base Cut-Off Current
I
BL
h
FE
1
h
FE
2
DC Current Gain (Note)
h
FE
3
h
FE
4
h
FE
5
Current Gain Bandwidth Product
f
T
Output Capacitance
C
OB
Turn On Time
t
ON
Turn Off Time
t
OFF
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
TEST CONDITIONS
I
C
=10μA, I
E
=0
I
C
=1mA, I
B
=0 (Note)
I
E
=10μA, I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=30V, V
EB
=3V
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=50mA
V
CE
=1V, I
C
=100mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=5V, I
E
=0, f=1MHz
V
CC
=3V,V
BE
=0.5V,I
C
=10mA,I
B1
=1mA
I
B
1=1
B
2=1mA
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2
V
0.3
V
0.65
0.85 V
0.95 V
50
nA
50
nA
40
70
100
300
60
30
300
MHz
4
pF
70
ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-012.F
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