MMBT3904
TYPICAL CHARACTERISTICS
NPN EPITAXIAL SILICON TRANSISTOR
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
10
5
3
1
0.5
0.3
0.1
0.05
0.03
0.01
0.1 0.3 0.5 1
V
CE(sat)
I
C
=10 I
B
V
BE(sat)
6
5
4
3
2
1
3050 100
0
1
Current Gain-Bandwidth Product, f
T
(MHz)
DC Current Gain, h
FE
Output Capacitance
I
E
=0
f=1MHz
3 5 10
3
5
10
30 50 100
Collector current, I
C
(mA)
Collector-Base Voltage, V
CB
(V)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-012.F
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