MMBT3904
PARAMETER
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
( Ta=25℃, unless otherwise specified )
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Collector Dissipation
P
C
350
mW
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
I
CEX
V
CE
=30V, V
EB
=3V
Base Cut-off Current
I
BL
V
CE
=30V, V
EB
=3V
Collector-base breakdown voltage
V
CBO
I
C
=10μA, I
E
=0
Collector-emitter breakdown voltage (note)
V
CEO
I
C
=1mA, I
B
=0
Emitter-base breakdown voltage
V
EBO
I
E
=10μA, I
C
=0
h
FE
1
V
CE
=1V, I
C
=0.1mA
h
FE
2
V
CE
=1V, I
C
=1mA
DC current gain (note)
h
FE
3
V
CE
=1V, I
C
=10mA
h
FE
4
V
CE
=1V, I
C
=50mA
h
FE
5
V
CE
=1V, I
C
=100mA
V
CE(SAT)
1 I
C
=10mA, I
B
=1mA
Collector-emitter saturation voltage (note)
V
CE(SAT)
2 I
C
=50mA, I
B
=5mA
Base-emitter saturation voltage (note)
Current gain bandwidth product
Output Capacitance
Turn on time
V
BE(SAT)
1
V
BE(SAT)
2
f
T
C
ob
t
ON
MIN TYP MAX UNIT
50
nA
50
nA
60
V
40
V
6
V
40
70
100
300
60
30
0.2
V
0.3
0.85
0.95
4
70
250
V
V
V
MHz
pF
ns
ns
Turn off time
t
OFF
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
I
C
=10mA, I
B
=1mA
0.65
I
C
=50mA, I
B
=5mA
V
CE
=20V, I
C
=10mA, f=100MHz
300
V
CB
=5V, I
E
=0, f=1MHz
V
CC
=3V,
V
BE
=0.5V,
I
C
=10mA,
I
B
1=1mA
I
B
1=1
B
2=1mA
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R206-012,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
