MJE2955TG-TN3-R 参数 Datasheet PDF下载

MJE2955T



ABSOLUTE MAXIMUM RATING

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

I

B

TO-220

TO-252

P

D

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector current

Base Current

Power Dissipation (T

A

=25°C)

PNP SILICON TRANSISTOR

RATINGS

-70

-60

-5

-10

-6

75

20

UNIT

V

V

V

A

A

W

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C ~70°C



ELECTRICAL CHARACTERISTICS

(T

A

=25°C, unless otherwise specified)

SYMBOL

BV

CEO

BV

CBO

BV

EBO

I

CBO

I

CEO

I

CEX

I

EBO

V

CE(SAT)1

V

CE(SAT)2

V

BE(ON)

h

FE1

h

FE2

f

T

TEST CONDITIONS

I

C

=-200mA

I

C

=-10mA

I

E

=-10mA

V

CB

=-70V

V

CE

=-30V

V

CE

=-70V, V

EB(OFF)

=-1.5V

V

EB

=-5V

I

C

=-4A, I

B

=-0.4A

I

C

=-10A, I

B

=-3.3A

V

CE

=-4V, I

C

=-4A

I

C

=-4A, V

CE

=-4V

I

C

=-10A, V

CE

=-4V

V

CE

=-10V, I

C

=-0.5A, f=1MHz

MIN

-60

-70

-5

TYP MAX UNIT

V

V

V

-1

mA

-700

A

-1

mA

-5

mA

-1.1

V

-8.0

-1.8

V

100

MHZ

PARAMETER

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter Saturation Voltage

Baser-Emitter on Voltage

DC Current Gain

Current Gain Bandwidth Product

20

5

2

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R203-012.E