MJE2955T
ABSOLUTE MAXIMUM RATING
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
TO-220
TO-252
P
D
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector current
Base Current
Power Dissipation (T
A
=25°C)
PNP SILICON TRANSISTOR
RATINGS
-70
-60
-5
-10
-6
75
20
UNIT
V
V
V
A
A
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
CEO
I
CEX
I
EBO
V
CE(SAT)1
V
CE(SAT)2
V
BE(ON)
h
FE1
h
FE2
f
T
TEST CONDITIONS
I
C
=-200mA
I
C
=-10mA
I
E
=-10mA
V
CB
=-70V
V
CE
=-30V
V
CE
=-70V, V
EB(OFF)
=-1.5V
V
EB
=-5V
I
C
=-4A, I
B
=-0.4A
I
C
=-10A, I
B
=-3.3A
V
CE
=-4V, I
C
=-4A
I
C
=-4A, V
CE
=-4V
I
C
=-10A, V
CE
=-4V
V
CE
=-10V, I
C
=-0.5A, f=1MHz
MIN
-60
-70
-5
TYP MAX UNIT
V
V
V
-1
mA
-700
A
-1
mA
-5
mA
-1.1
V
-8.0
-1.8
V
100
MHZ
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Saturation Voltage
Baser-Emitter on Voltage
DC Current Gain
Current Gain Bandwidth Product
20
5
2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2
QW-R203-012.E