MAC97A6/8
ABSOLUTE MAXIMUM RATINGS
CHARACTERISTIC
SYMBOL
TRIACS
UNIT
V
V
A
A
A
2
As
A/µs
A/µs
A/µs
A/µs
V
A
W
W
℃
℃
RATINGS
MAC97A6
400
Repetitive Peak off-State Voltage (T
J
=25 ~125
℃
)
V
DRM
MAC97A8
600
RMS on-State Current (Full Sine Wave, T
LEAD
≤50
℃
)
I
T(RMS)
0.6
Non-Repetitive Peak on-State Current
t=20ms
8.0
I
TSM
(Full Sine Wave, T
J
=25
℃
Prior to Surge)
t=16.7ms
8.8
2
2
I t for Fusing (t=10ms)
It
0.32
T2+G+
50
Repetitive Rate of Rise of on-State Current After T2+G-
50
dI
T
/dt
Triggering(I
TM
=1.0A, I
G
=0.2A, dI
G
/dt=0.2A/µs)
T2-G-
50
10
T2-G+
Peak Gate Voltage [ t=2µs (max) ]
V
GM
5
Peak Gate Current [ t=2µs (max) ]
I
GM
1
Peak Gate Power
[ t=2µs (max) ]
P
GM
5
Average Gate Power [ Tcase=80
℃
, t=2us (max) ]
P
G(AV)
0.1
Operating Junction Temperature
T
J
-40~+125
Storage Temperature
T
STG
-40~+150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance Junction to Ambient
TO-92
SOT-223
SYMBOL
I
GT
SYMBOL
θ
JA
RATINGS
150
165
MIN
TYP
1
2
2
4
1
5
1
2
1
1.4
0.9
0.7
3
UNIT
℃
/W
℃
/W
STATIC CHARACTERISTICS
(T
J
=25
℃
, unless otherwise specified)
PARAMETER
Gate Trigger Current
TEST CONDITIONS
T2+G+
T2+G-
V
D
=12V, I
T
=0.1A
T2-G-
T2-G+
T2+G+
T2+G-
V
D
=12V, I
GT
=0.1A
T2-G-
T2-G+
V
D
=12V, I
GT
=0.1A
I
T
=0.85A
V
D
=12V,I
T
=0.1A
V
D
=V
DRM
, I
T
=0.1A, T
J
=110
℃
V
D
=V
DRM(MAX)
, T
J
=110
℃
MAX UNITS
5
mA
5
mA
5
mA
7
mA
10
mA
10
mA
10
mA
10
mA
10
mA
1.9
V
2
V
V
100
µA
Latching Current
Holding Current
On-State Voltage
Gate Trigger Voltage
Off-State Leakage Current
I
L
I
H
V
T
V
GT
I
D
SYMBOL
0.1
DYNAMIC CHARACTERISTICS
(T
J
=25
℃
, unless otherwise specified)
PARAMETER
Critical Rate of Rise of Off-State
Voltage
Critical Rate of Rise of Commutation
Voltage
Gate Controlled Turn-On Time
CONDITIONS
V
D
=67% of V
DRM(max)
,
dV
D
/dt
Tcase=110
℃
, Exponential
Waveform, Gate Open Circuit
V
D
=Rated V
DRM
, Tcase=50
℃
,
dVcom/dt l
TM
=0.84A, commutating
dl/dt=0.3A/ms
I
TM
=1.0A,V
D
=V
DRM(max)
,
tgt
I
G
=25mA,dI
G
/dt=5A/µs
MIN
30
TYP
45
MAX UNITS
V/µs
5
2
V/µs
µs
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