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BC817-40 参数 Datasheet PDF下载

BC817-40图片预览
型号: BC817-40
PDF下载: 下载PDF文件 查看货源
内容描述: NPN通用晶体管 [NPN GENERAL PURPOSE TRANSISTORS]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 462 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
 浏览型号BC817-40的Datasheet PDF文件第1页浏览型号BC817-40的Datasheet PDF文件第3页  
ELECTRICAL CHARACTERISTICS(T
J
=25
o
C,unless otherwise notes)
PARAMETER
Collector-Emitter Breakdown Voltage (Ic=10mA,
I
B
=0)
Collector-Emitter Breakdown Voltage (V
EB=
0V, Ic=10uA
Emitter-Base Breakdown Voltage (I
E=
1.0uA,Ic=0)
Emitter-Base Cutoff Current (V
EB
=5V)
Collector-Base Cutoff Current (V
CB
=20V,I
E
=0)
I
C BO
O
T
J
=150 C
SYMBOL
V
(BR)
CEO
V
(BR)
CES
V
(BR)
EBO
I
EBO
MIN.
45
50
5.0
-
-
-
TYP.
-
-
-
-
MAX.
-
-
-
100
100
UNIT
V
V
V
nA
nA
uA
-
5.0
-
-
-
-
DC Current Gain
(Ic=100mA,V
CE
=1V)
BC817-16
BC817-25
BC817-40
h
FE
100
160
250
40
250
400
600
-
-
(Ic=500mA,Vc
E
=1V)
Collector-Emitter Saturation Voltage (Ic=500mA ,I B
=
50mA)
Base-Emitte Voltage (Ic=500mA,V
CE
=
1.0V)
Collector-Base Capacitance (V
CB
=10v,I
E
=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,Vc
E=
5V,f=100MHz)
V
CE(SAT)
V
BE(ON)
C
C BO
f
T
-
-
-
100
-
-
5.0
-
0.7
1.2
-
-
V
V
pF
MHz
ELECTRICAL CHARACTERISTICS CURVES
300
250
450
400
350
200
h
FE
300
h
FE
V
CE
= 1V
250
200
150
100
50
150
100
50
V
CE
= 1V
0
0.1
1
10
100
1000
0
0.01
0.01
0.1
1
10
100
1000
Collector Current, I
C
(mA)
Collector Current, I
C
(mA)
Fig. 1.
700
600
500
400
h
FE
300
200
100
BC817-16 Typical h
FE
vs. I
C
100
Fig. 2.
BC817-25 Typical h
FE
vs. I
C
C
IB
(EB)
Capacitance, C (pF)
10
C
OB
(EB)
V
CE
= 1V
0
0.01
0.1
1
10
100
1000
1
0.1
1
10
100
Collector Current, I
C
(mA)
Reverse Voltage, V
R
(V)
Fig. 3.
STAD-JUL.13.2005
BC817-40 Typical h
FE
vs. I
C
Fig. 4. Typical Capacitances
PAGE . 2