90N02
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
20
UNIT
V
Drain-Source Voltage (Note 2)
Gate-Source Voltage
±20
V
Continuous (TC<135°C, VGS=10V)
Pulsed
90
A
Drain Current
IDM
360
A
Single Pulsed Avalanche Energy (Note 3)
Power Dissipation
EAS
168
mJ
W
PD
54
Junction Temperature
TJ
+150
-55~+150
°C
°C
Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ=25~150°C
3. Starting TJ=25°C , L = 0.42mH, IAS = 90A
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
2.3
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
VDS=20V, VGS=0V
GS=+20V, VDS=0V
20
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate-Source Leakage Current
IGSS
VGS=-20V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=90A
0.9 2.8 2.5
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
5.1
7
mꢀ
CISS
COSS
CRSS
3565
1310
395
pF
pF
pF
Output Capacitance
VGS=0V, VDS=20V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge at 20V
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
QG
QGS
QGD
tD(ON)
tR
46
6.9
9.8
9
60 nC
nC
VDD=20V, ID=90A, RL=0.4ꢀ
nC
ns
Rise Time
106
53
ns
V
V
DD=20V, ID=90A, RL=0.4ꢀ,
GS=10V, RGS=2.5 ꢀ
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
ns
41
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD ISD=90A
0.9 1.25
V
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R502-751.a
www.unisonic.com.tw
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