7N60 参数 Datasheet PDF下载

7N60

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°C, unless otherwise specified)

Power MOSFET

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V

DSS

600

V

Gate-Source Voltage

V

GSS

±30

V

Avalanche Current (Note 2)

I

AR

7.4

A

7.4

A

Continuous

I

D

Drain Current

Pulsed (Note 2)

I

DM

29.6

A

530

mJ

Single Pulsed (Note 3)

E

AS

Avalanche Energy

Repetitive (Note 2)

E

AR

14.2

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

142

Power Dissipation

TO-220F/TO-220F1

P

D

48

W

TO-220F2

50

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 19.5mH, I

AS

= 7.4A, V

DD

= 50V, R

G

= 25

Ω,

Starting T

J

= 25°C

4. I

SD

≤7.4A,

di/dt≤200A/μs, V

DD

≤BV

DSS

, Starting T

J

= 25°C

THERMAL DATA

PARAMETER

Junction to Ambient

TO-220/TO-262/TO-263

Junction to Case

TO-220F/TO-220F1

TO-220F2

SYMBOL

θ

JA

θ

JC

RATINGS

62.5

0.88

2.6

2.5

UNIT

°C/W

°C/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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