7N60A
TYPICAL CHARACTERISTICS
Power MOSFET
Drain Current, I
D
(A)
Drain Current, I
D
(A)
ON Resistance vs. Drain Current
Note:
1. T
d
=25°C
2.0 2. Pulsed test
1.5
V
GS
=20V
1.0
0.8
0
0
5
10
15
20
25
Drain Current, I
D
(A)
Capacitance vs. Drain Source Voltage
10000
Gate Source Voltage, V
GS
(V)
C
ISS
10
2.5
Reverse Drain Current vs.
Source Drain Voltage
V
GS
=10V
Reverse Drain Current, I
S
(A)
ON Resistance, R
DS(ON)
(Ω)
Note:
1. V
DS
=10V
2. Pulse test
10
1
10
0
10
-1
0.4
0.6
0.8
1.0
8 1.2
1.4
Source Drain Voltage, V
SD
(V)
Gate Source Voltage vs. Total Gate Charge
Note:
1. I
D
= 7A
2. T
C
= 25
°C
Capacitance (pF)
1000
V
DD
= 80V
V
DD
= 200V
5
V
DD
= 300V
100
C
OSS
10 Note:
1. V
GS
: 0V
2. f = 1MHz
3. T
C
= 25°C
1
1
0.1
C
RSS
0
10
100
5
10
15
20
25
30
35
Total Gate Charge, Q
G
(nC)
Drain Source Voltage, V
DS
(A)
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