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7N60A 参数 Datasheet PDF下载

7N60A图片预览
型号: 7N60A
PDF下载: 下载PDF文件 查看货源
内容描述: 7安培, 600/650伏特N沟道功率MOSFET [7 Amps, 600/650 Volts N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 7 页 / 276 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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7N60A
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°C, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
7N60A-A
600
V
Drain-Source Voltage
V
DSS
7N60A-B
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
7
A
Continuous Drain Current
I
D
7
A
Pulsed Drain Current (Note 2)
I
DM
28
A
Single Pulsed (Note 3)
E
AS
330
mJ
Avalanche Energy
7.5
mJ
Repetitive (Note 2)
E
AR
TO-220
65
W
Power Dissipation
P
D
TO-220F/TO-220F1
30
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J(MAX)
3. L = 12.05mH, I
AS
= 7.4A, V
DD
=50V, R
G
= 27
Ω,
Starting T
J
= 25°C
THERMAL DATA
PARAMETER
TO-220
TO-220F/TO-220F1
TO-220
TO-220F/TO-220F1
SYMBOL
θ
JA
θ
JA
θ
JC
θ
JC
RATINGS
83.3
62.5
1.92
4.16
UNIT
°C/W
°C/W
°C/W
°C/W
Junction to Ambient
Junction to Case
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
7N60A-A
7N60A-B
SYMBOL
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
TEST CONDITIONS
V
GS
= 0V, I
D
= 250μA
V
DS
= 600V, V
GS
= 0V
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3.5A (Note 4)
2.0
1.0
MIN TYP MAX UNIT
600
650
10
100
-100
4.0
1.2
V
V
µA
nA
nA
V
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
=25V, V
GS
=0V, f=1.0 MHz
950 1430
85 130
12
18
16
60
80
65
28
5.5
11
V
DD
=300V, I
D
=7A, R
G
=25Ω
(Note 1, 2)
V
DS
=300V, I
D
=7A, V
GS
=10 V
(Note 1, 2)
42
8.3
17
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 7
VQW-R502-111,D