7N60A
TYPICAL CHARACTERISTICS (Cont.)
Power MOSFET
Drain-Source Voltage, V
DSS
(Normalized)
1.1
ON-Resistance, R
DS(ON)
(Normalized)
1.2
Drain-Source Voltage vs.
Junction Temperature
Note:
1. V
GS
= 0V
2. I
D
= 250µA
ON-Resistance vs. Junction Temperature
3.0
Note:
1. V
GS
= 10V
2.5 2. I
D
= 3.5A
2.0
1.5
1.0
0.5
0.0
-50 -25 0
25 50 75 100 125 150 175
Junction Temperature, T
J
(°C)
1.0
0.9
0.8
-50 -25 0
25 50 75 100 125 150 175
Junction Temperature, T
J
(°C)
Drain Current, I
D
(A)
Drain Current, I
D
(A)
1m
s
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
7 of 7
VQW-R502-111,F
V
DSS
MAX
UTC-IC [ UNISONIC TECHNOLOGIES ]
