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70N06T-TA3-T 参数 Datasheet PDF下载

70N06T-TA3-T图片预览
型号: 70N06T-TA3-T
PDF下载: 下载PDF文件 查看货源
内容描述: 70安培, 60伏特N沟道功率MOSFET [70 Amps, 60 Volts N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 159 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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70N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate to Source Voltage
±20
V
T
C
= 25℃
70
A
Continuous Drain Current
I
D
T
C
= 100℃
56
A
Drain Current Pulsed (Note 1)
I
DM
280
A
Single Pulsed Avalanche Energy (Note 2)
E
AS
600
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
20
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
10
V/ns
Total Power Dissipation (T
C
= 25℃)
200
W
P
D
1.4
W/℃
Derating Factor above 25℃
Operation Junction Temperature
T
J
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
62.5
MAX
1.2
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Source Leakage Reverse
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 µA
MIN
60
0.08
1
10
100
-100
2.0
12
3300
530
80
12
79
80
52
90
20
30
4.0
15
TYP
MAX UNIT
V
V/℃
µA
µA
nA
nA
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
BV
DSS
/△T
J
I
D
= 1mA, Referenced to 25℃
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V,
T
J
= 150℃
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 35 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
V
DD
= 30V, I
D
=70 A,
V
GS
=10V, (Note 4, 5)
V
DS
= 60V, V
GS
= 10 V
I
D
= 48A, (Note 4, 5)
140
35
45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-089,A