70N06
TYPICAL CHARACTERISTICS
On -State Characteristics
V
GS
Top : 15V
10 V
8 V
7 V
2
10
6 V
5 .5V
5V
Bottorm : 4.5V
MOSFET
Transfer Characteristics
Drain Current, I
D
(A)
Drain Current, I
D
(A)
10
2
10
1
25
°
С
10
1
4 .5V
1 50
°
С
Note :
1 . V
DS
=25 V
2. 20 Pulse Test
µs
10
0
2
3
5
7
9 10
4
6
8
Gate -Source Voltage , V
GS
(V)
10
0 -1
10
10
10
Drain-Source Voltage , V
DS
(V)
0
1
Drain-Source On-Resistance, R
DS(ON)
(mΩ)
15
On-Resistance Variation vs Drain
.
Current and Gate Voltage
Reverse Drain Current, I
SD
(A)
10
2
Reverse Drain Current vs Allowable
.
Case Temperature
14
13
V
GS
=10V
150℃
10
1
25℃
*Note:
1. V
GS
=0V
2. 250µs Test
1.6
12
11
0
10 20 30 40 50 60 70 80 90 100
Drain Current, I
D
(A)
10
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage V
SD
(V)
,
6000
Capacitance (pF)
5000
4000
3000
2000
1000
Gate-to-Source Voltage, V
GS
(V)
Capacitance Characteristics
(Non-Repetitive)
C
ISS=
C
GS
+C
GD
(C
DS
=shorted)
C
OSS
=C
DS
+C
GD
C
RSS
=C
GD
C
ISS
Gate Charge Characteristics
12
10
8
6
4
2
0
0
*Note: I
D
=48A
5 10 15 20 25 30 35 40 45
Total Gate Charge, Q
G
(nC)
V
DS
=38V
V
DS
=60V
C
OSS
0
C
RSS
*Note:
1. V
GS
=0V
2. f = 1MHz
5
10 15 20 25 30 35
Drain-Source Voltage, V
DC
(V)
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QW-R502-089,A
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