70N06
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs Junction
.
Temperature
1.2
1.1
On-Resistance Variation vs
.
Junction Temperature
MOSFET
Drain-Source On-Resistance, R
DS(ON)
,
(Normalized)
Drain-Source Breakdown Voltage,
BV
DSS
(Normalized)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
*Note:
1. V
GS
=0V
2. I
D
=250µA
-50
0
50
100
150 200
0.9
*Note:
1. V
GS
=10V
2. I
D
=35A
-50
0
50
100
150
Junction Temperature, T
J
(℃)
0.8
-100
Junction Temperature, T
J
(℃)
Maximum Safe Operating
100 Operation in This
Area by R
DS (on)
70
60
Maximum Drain Current vs. Case
Temperature
Drain Current , I
D,
(A)
Drain Current, I
D
(A)
10
100µs
10ms
DC
1ms
50
40
30
20
10
0
25
50
100
125
75
Case Temperature, T
C
(℃)
150
1
0.1
1
*Note:
1. T
c
=25℃
2. T
J
=150℃
3. Single Pulse
10
100
1000
Drain-Source Voltage, V
D
(V)
Transient Thermal Response Curve
Thermal Response, Z
θJC
(t)
1
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
*Note:
1. Z
θJ
C
(t) = 0.88℃/W Max.
2. Duty Factor , D=t1/t2
3. T
J
-T
C
=P
DM
×Z
θJ
C
(t)
0.01
10
1
1E-5 1E-4 1E-3 0.01
0.1
Square Wave Pulse Duration t
1
(sec)
,
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