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70N06G-TQ2-T 参数 Datasheet PDF下载

70N06G-TQ2-T图片预览
型号: 70N06G-TQ2-T
PDF下载: 下载PDF文件 查看货源
内容描述: 70安培, 60伏特N沟道功率MOSFET [70 Amps, 60 Volts N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 8 页 / 344 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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70N06
ABSOLUTE MAXIMUM RATINGS
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
±20
V
T
C
= 25°C
70
A
Continuous Drain Current
I
D
T
C
= 100°C
56
A
Drain Current Pulsed (Note 2)
I
DM
280
A
Single Pulsed (Note 3)
E
AS
600
mJ
Avalanche Energy
Repetitive (Note 2)
E
AR
20
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
10
V/ns
Power Dissipation
P
D
200
W
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Repeativity rating: pulse width limited by junction temperature
L=0.24mH, I
AS
=70A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
I
SD
≤48A,
di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62
1.2
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
MIN
60
1
100
-100
0.08
2.0
12
3300
530
80
12
79
80
52
90
20
30
4.0
15
TYP MAX UNIT
V
μA
nA
nA
V/°C
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
BV
DSS
/△T
J
I
D
= 1mA, Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 35 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
V
DD
= 30V, V
GS
=10V,I
D
=70 A
(Note 1, 2)
V
DS
= 60V, V
GS
= 10 V,
I
D
= 48A (Note 1, 2)
140
35
45
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 8
QW-R502-089.C