5N40
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
VGSS
ID
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
400
±30
5
V
Continuous (TC=25°C)
Pulsed (Note 2)
A
Drain Current
IDM
20
A
Avalanche Current (Note 2)
Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
IAR
5
A
EAS
300
7.3
mJ
mJ
V/ns
W
Avalanche Energy
EAR
dv/dt
4.5
TO-220
TO-252
69
Power Dissipation
PD
54
W
Junction Temperature
Storage Temperature
TJ
+150
-55~+150
°C
°C
TSTG
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 21.5mH, IAS = 5A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
4. ISD ≤ 5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
62.5
UNIT
°C/W
TO-220
TO-252
TO-220
TO-252
Junction to Ambient
Junction to Case
θJA
110
1.8
θJC
°C/W
2.13
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