50N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
Power MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
T
C
= 25°C
50
A
Continuous Drain Current
I
D
T
C
= 100°C
35
A
Pulsed Drain Current (Note 2)
I
DM
200
A
Single Pulsed (Note 3)
E
AS
480
mJ
Avalanche Energy
13
mJ
Repetitive (Note 2)
E
AR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
V/ns
TO-220
120
W
TO-220F
70
W
Power Dissipation (T
C
=25°C)
P
D
TO-251
136
W
TO-252
136
W
Junction Temperature
T
J
+150
°C
Operation and Storage Temperature
T
STG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by T
J
3. L=0.38mH, I
AS
=50A, V
DD
=25V, R
G
=20Ω, Starting T
J
=25°C
4. I
SD
≤50A,
di/dt≤300A/μs, V
DD
≤BV
DSS
, Starting T
J
=25°C
THERMAL DATA
PARAMETER
Junction to Ambient
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
SYMBOL
θ
JA
RATING
62
62
100
100
1.24
1.78
1.1
1.1
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Junction to Case
θ
JC
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate-Source Leakage Current
Reverse
Breakdown Voltage Temperature
Coefficient
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
MIN TYP MAX UNIT
60
10
100
-100
0.07
2.0
18
4.0
23
V
μA
nA
nA
V/°C
V
mΩ
pF
pF
pF
V
GS
= 0 V, I
D
= 250
μA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V, V
DS
= 0 V
I
GSS
V
GS
= -20V, V
DS
= 0 V
I = 250
μA,
△
BV
DSS
/△T
J D
Referenced to 25°C
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10 V, I
D
= 25 A
V
GS
= 0 V, V
DS
= 25 V
f = 1MHz
900 1220
430 550
80 100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-088.E
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