50N06
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VDSS
RATINGS
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
60
±20
50
VGSS
V
TC = 25°C
A
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
ID
TC = 100°C
35
A
IDM
EAS
200
480
13
A
Single Pulsed (Note 3)
Repetitive (Note 2)
mJ
mJ
V/ns
W
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
7
TO-220
TO-220F
TO-251
TO-252
120
70
W
Power Dissipation (TC=25°C)
PD
136
136
+150
-55 ~ +150
W
W
Junction Temperature
TJ
°C
°C
Operation and Storage Temperature
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by TJ
3. L=0.38mH, IAS=50A, VDD=25V, RG=20Ω, Starting TJ=25°C
4. ISD≤50A, di/dt≤300A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SYMBOL
RATING
62
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
TO-220
TO-220F
TO-251
TO-252
TO-220
TO-220F
TO-251
TO-252
62
Junction to Ambient
Junction to Case
θJA
100
100
1.24
1.78
1.1
θJC
1.1
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS = 0 V, ID = 250 μA
VDS = 60 V, VGS = 0 V
VGS = 20V, VDS = 0 V
VGS = -20V, VDS = 0 V
ID = 250 μA,
60
V
10
μA
Forward
Reverse
100 nA
-100 nA
Gate-Source Leakage Current
IGSS
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
0.07
18
V/°C
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250 μA
2.0
4.0
23
V
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS = 10 V, ID = 25 A
mΩ
CISS
COSS
CRSS
900 1220 pF
430 550 pF
80 100 pF
VGS = 0 V, VDS = 25 V
Output Capacitance
f = 1MHz
Reverse Transfer Capacitance
UNISONIC TECHNOLOGIES CO., LTD
2 of 8
QW-R502-088.E
www.unisonic.com.tw
UTC [ Unisonic Technologies ]
