4N60G-X-TM3-T 参数 Datasheet PDF下载

4N60

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25°С, unless otherwise specified)

PARAMETER

4N60-A

Drain-Source Voltage

4N60-B

Gate-Source Voltage

Avalanche Current (Note 2)

Continuous

Drain Current

Pulsed (Note 2)

SYMBOL

Power MOSFET

RATINGS

UNIT

600

V

V

DSS

650

V

V

GSS

±30

V

I

AR

4.4

A

I

D

4.0

A

16

A

I

DM

4N60

260

mJ

Single Pulsed (Note 3)

E

AS

Avalanche Energy

4N60-E

200

mJ

Repetitive (Note 2)

E

AR

10.6

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

TO-220/TO-262/TO-263

106

W

TO-220F/TO-220F1

36

W

Power Dissipation

P

D

TO-251

50

W

TO-252

50

W

Junction Temperature

T

J

+150

°С

Operating Temperature

T

OPR

-55 ~ +150

°С

Storage Temperature

T

STG

-55 ~ +150

°С

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, I

AS

= 4A, V

DD

= 50V, R

G

= 25

Ω,

Starting T

J

= 25°C

4. I

SD

≤4.4A,

di/dt

≤200A/μs,

V

DD

≤BV

DSS

, Starting T

J

= 25°C

THERMAL DATA

PARAMETER

Junction to Ambient

PACKAGE

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-251

TO-252

TO-220/TO-262/TO-263

TO-220F/TO-220F1

TO-251

TO-252

SYMBOL

4N60-A

4N60-B

Forward

Reverse

BV

DSS

I

DSS

I

GSS

SYMBOL

θ

JA

RATINGS

62.5

62.5

83

83

1.18

3.47

2.5

2.5

UNIT

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

°С/W

MIN TYP MAX UNIT

600

650

10

100

-100

0.6

2.0

4.0

2.5

520

70

8

670

90

11

V

V

μA

nA

nA

V/°С

V

Ω

pF

pF

pF

Junction to Case

θ

Jc

ELECTRICAL CHARACTERISTICS

(T

C

=25°С, unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

TEST CONDITIONS

V

GS

= 0 V, I

D

= 250

μA

V

DS

= 600 V, V

GS

= 0 V

V

GS

= 30 V, V

DS

= 0 V

V

GS

= -30 V, V

DS

= 0 V

Breakdown Voltage Temperature

Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

△

BV

DSS

/△T

J

I

D

= 250

μA,

Referenced to 25°C

V

GS(TH)

R

DS(ON)

C

ISS

C

OSS

C

RSS

V

DS

= V

GS

, I

D

= 250

μA

V

GS

= 10 V, I

D

= 2.2 A

V

DS

= 25 V, V

GS

= 0 V, f = 1MHz

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R502-061,N