4N60
ELECTRICAL CHARACTERISTICS(Cont.)
Power MOSFET
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D(ON)
13 35
V
DD
= 300V, I
D
= 4.0A, R
G
= 25Ω
Turn-On Rise Time
t
R
45 100
(Note 1, 2)
Turn-Off Delay Time
t
D(OFF)
25 60
Turn-Off Fall Time
t
F
35 80
Total Gate Charge
Q
G
15 20
V
DS
= 480V,I
D
= 4.0A, V
GS
= 10 V
Gate-Source Charge
Q
GS
3.4
(Note 1, 2)
Gate-Drain Charge
Q
GD
7.1
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
= 0 V, I
S
= 4.4 A
1.4
Maximum Continuous Drain-Source Diode
I
S
4.4
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
17.6
Forward Current
V
GS
= 0 V, I
S
= 4.4 A,
Reverse Recovery Time
t
RR
250
dI
F
/dt = 100 A/μs (Note 1)
1.5
Reverse Recovery Charge
Q
RR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2. Essentially independent of operating temperature
UNIT
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
μC
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