4N60
TYPICAL CHARACTERISTICS
Breakdown Voltage Variation vs.
Temperature
1.2
Drain-Source Breakdown Voltage,
BV
DSS
(Normalized) (V)
Drain-Source On-Resistance,
R
DS(ON)
(Normalized) (Ω)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Power MOSFET
On-Resistance Junction Temperature
1.1
1.0
0.9
Note:
1. V
GS
=0V
2. I
D
=250µA
-50
0
50
100
150
200
Note:
1. V
GS
=10V
2. I
D
=4A
-50
0
50
100
150
200
0.8
-100
Junction Temperature, T
J
(°С)
Junction Temperature, T
J
(°С)
On-State Characteristics
10
V
GS
10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
Top:
Transfer Characteristics
10
25°С
5.0V
1
150°С
1
0.1
Notes:
1. 250µs Pulse Test
2. T
C
=25
°С
0.1
2
4
6
Notes:
1. V
DS
=50V
2. 250µs Pulse Test
0.1
1
10
8
10
Drain-to-Source Voltage, V
DS
(V)
Gate-Source Voltage, V
GS
(V)
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