2N60
ABSOLUTE MAXIMUM RATINGS
(
T
C
= 25°С, unless otherwise specified)
Power MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
600
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current (Note 2)
I
AR
2.0
A
2.0
A
Continuous
I
D
Drain Current
Pulsed (Note 2)
I
DM
8.0
A
140
mJ
Single Pulsed (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
4.5
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220/ TO-262
54
W
P
D
TO-220F/TO-220F1
23
W
Power Dissipation
TO-251/TO-251L/TO-252
(T
C
= 25°С)
44
W
TO-126
40
W
Junction Temperature
T
J
+150
°С
Operating Temperature
T
OPR
-55 ~ +150
°С
Storage Temperature
T
STG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by T
J
3. L=64mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Ω,
Starting T
J
= 25°C
4. I
SD
≤2.4A,
di/dt≤200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PACKAGE
TO-220/ TO-262
TO-220F/TO-220F1
Junction to Ambient
TO-251/TO-251L/TO-252
TO-126
TO-220/ TO-262
TO-220F/TO-220F1
Junction to Case
TO-251/TO-251L/TO-252
TO-126
PARAMETER
SYMBOL
θ
JA
RATINGS
62.5
62.5
100
89
2.32
5.5
2.87
3.12
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
θ
Jc
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-053.P
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