2N5551
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃, unless otherwise specified)
RATINGS
UNIT
Collector-Base Voltage
180
V
Collector-Emitter Voltage
160
V
Emitter-Base Voltage
6
V
Collector Dissipation
TO-92
625
mW
P
C
Collector Dissipation
SOT-89
500
mW
Collector Current
I
C
600
mA
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100μA, I
E
=0
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA, I
B
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10μA, I
C
=0
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
Emitter Cut-off Current
I
EBO
V
BE
=4V,I
C
=0
V
CE
=5V, I
C
=1mA
h
FE1
V
CE
=5V, I
C
=10mA
DC Current Gain(Note)
h
FE2
V
CE
=5V, I
C
=50mA
h
FE3
I
C
=10mA, I
B
=1mA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
Base-Emitter Saturation Voltage
V
BE(SAT)
I
C
=50mA, I
B
=5mA
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=10mA, f=100MHz
Output Capacitance
C
ob
V
CB
=10V, I
E
=0 f=1MHz
I
C
=0.25mA, V
CE
=5V
Noise Figure
NF
R
S
=1kΩ, f=10Hz ~ 15.7kHz
Note: Pulse test: PW<300μs, Duty cycle<2%
MIN
180
160
6
TYP
MAX
UNIT
V
V
V
nA
nA
50
50
80
80
80
160
400
0.15
0.2
1
1
300
6.0
8
V
V
MHz
pF
dB
100
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-002.C