2N5551 参数 Datasheet PDF下载

2N5551

PARAMETER

SYMBOL

V

CBO

V

CEO

V

EBO

NPN SILICON TRANSISTOR

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃, unless otherwise specified)

RATINGS

UNIT

Collector-Base Voltage

180

V

Collector-Emitter Voltage

160

V

Emitter-Base Voltage

6

V

Collector Dissipation

TO-92

625

mW

P

C

Collector Dissipation

SOT-89

500

mW

Collector Current

I

C

600

mA

Junction Temperature

T

J

+150

℃

Storage Temperature

T

STG

-55 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

(Ta=25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

BV

CBO

I

C

=100µA, I

E

=0

Collector-Emitter Breakdown Voltage BV

CEO

I

C

=1mA, I

B

=0

Emitter-Base Breakdown Voltage

BV

EBO

I

E

=10µA, I

C

=0

Collector Cut-off Current

I

CBO

V

CB

=120V, I

E

=0

Emitter Cut-off Current

I

EBO

V

BE

=4V,I

C

=0

V

CE

=5V, I

C

=1mA

h

FE1

V

CE

=5V, I

C

=10mA

DC Current Gain(Note)

h

FE2

V

CE

=5V, I

C

=50mA

h

FE3

I

C

=10mA, I

B

=1mA

Collector-Emitter Saturation Voltage

V

CE(SAT)

I

C

=50mA, I

B

=5mA

I

C

=10mA, I

B

=1mA

Base-Emitter Saturation Voltage

V

BE(SAT)

I

C

=50mA, I

B

=5mA

Current Gain Bandwidth Product

f

T

V

CE

=10V, I

C

=10mA, f=100MHz

Output Capacitance

C

ob

V

CB

=10V, I

E

=0 f=1MHz

I

C

=0.25mA, V

CE

=5V

Noise Figure

NF

R

S

=1kΩ, f=10Hz ~ 15.7kHz

Note: Pulse test: PW<300µs, Duty cycle<2%

MIN

180

160

6

TYP

MAX

UNIT

V

V

V

nA

nA

50

50

80

80

80

160

400

0.15

0.2

1

1

300

6.0

8

V

V

MHz

pF

dB

100

CLASSIFICATION OF h

FE

RANK

RANGE

A

80-170

B

150-240

C

200-400

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-002.B