2N5401
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25°C , unless otherwise specified)
RATINGS
UNIT
Collector-Base Voltage
-160
V
Collector-Emitter Voltage
-150
V
Emitter-Base Voltage
-5
V
Collector Current
-600
mA
TO-92
625
mW
Collector Dissipation
P
C
SOT-89
500
mW
℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Note: Pulse test: P
W
<300μs, Duty Cycle<2%
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE(SAT)
V
BE(SAT)
f
T
C
OB
NF
TEST CONDITIONS
I
C
= -100μA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -10μA, I
C
= 0
V
CB
= -120V, I
E
= 0
V
EB
= -3V, I
C
= 0
V
CE
= -5V, I
C
= -1mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -50mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
I
C
= -10mA, I
B
= -1mA
I
C
= -50mA, I
B
= -5mA
V
CE
= -10V, I
C
= -10mA
f = 100MHz
V
CB
= -10V, I
E
= 0, f = 1MHz
I
C
= -0.25mA, V
CE
= -5V
R
S
= 1kΩ, f = 10Hz ~ 15.7kHz
MIN
-160
-150
-5
TYP
MAX
UNIT
V
V
V
nA
nA
-50
-50
80
80
80
400
-0.2
-0.5
-1
-1
100
400
6.0
8
V
V
MHz
pF
dB
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-001,E
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