2N50
PARAMETER
Preliminary
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
RATINGS
UNIT
Drain-Source Voltage
500
V
Gate-Source Voltage
±30
V
Continuous (T
C
=25°C)
2*
A
Drain Current
Pulsed (Note 1)
8*
A
Avalanche Current (Note 1)
2
A
Single Pulsed
82
mJ
Avalanche Energy
Repetitive (Note 3)
3.3
mJ
TO-220F
23
T
C
=25°C
W
TO-252
50
Power Dissipation
P
D
TO-220F
0.18
W/°C
Derate above 25°C
0.4
TO-252
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
* Drain current limited by maximum junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220F
TO-252
TO-220F
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
110
5.5
2.5
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-547.a
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