2N5088/2N5089
PARAMETER
SYMBOL
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25℃, unless otherwise noted)
RATINGS
UNIT
2N5088
30
Collector-Emitter voltage
V
CEO
V
2N5089
25
2N5088
35
Collector-Base voltage
V
CBO
V
2N5089
30
Emitter-Base Voltage
V
EBO
4.5
V
Collector Current-Continuous
I
C
100
mA
Power Dissipation
625
mW
P
D
Derate Above 25℃
mW/℃
5
℃
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
Note 1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
(T
A
=25℃, unless otherwise noted)
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
200
83.3
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter
Breakdown Voltage
Collector-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cutoff Current
SYMBOL
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
TEST CONDITIONS
MIN
30
25
35
30
50
50
50
100
900
1200
TYP
MAX
UNIT
V(
BR)CEO
I
C
=1.0mA, I
B
=0 (Note)
V
(BR)CBO
I
C
=100μA, I
E
=0
I
CBO
I
EBO
V
CB
=20V, I
E
=0
V
CB
=15V, I
E
=0
V
EB
=3.0V, I
C
=0
V
EB
=4.5V, I
C
=0
V
CE
=5.0V, I
C
=100μA
2N5088
2N5089
2N5088
2N5089
2N5088
2N5089
V
V
nA
nA
DC Current Gain
h
FE
V
CE
=5.0V, I
C
=1.0mA
V
CE
=5.0V, I
C
=10mA
(Note)
I
C
=10mA, I
B
=1.0mA
I
C
=10mA, V
CE
=5.0V
300
400
350
450
300
400
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter On Voltage
V
BE(ON)
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
V
CE
=5.0mA, I
C
=500μA, f=20MHz
Collector-Base Capacitance
C
CB
V
CB
=5.0V, I
E
=0, f=100kHz
Emitter-Base Capacitance
C
EB
V
EB
=0.5V, I
C
=0, f=100kHz
2N5088
Small-Signal Current Gain
h
FE
V
CE
=5.0V, I
C
=1.0mA, f=1.0kHz
2N5089
2N5088
V
CE
=5.0V, I
C
=100μA, R
S
=10kΩ,
Noise Figure
NF
f=10KHz ~ 15.7kHz
2N5089
Note Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
0.5
0.8
50
4
10
1400
1800
3.0
2.0
V
V
MHz
pF
pF
350
450
dB
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-040.Ba
UTC-IC [ UNISONIC TECHNOLOGIES ]
