2N4403
TYPICAL CHARACTERISTICS
Collector-Emitter Voltage, V
CE(SAT)
(V)
PNP SILICON TRANSISTOR
DC Current Gain, h
FE
Base-Emitter OnVoltage, V
BE(ON )
(V)
-100
Collector-Cutoff Current
vs. Ambient Temperature
V
CB
=-35V
-10
Capacitance (pF)
16
12
8
4
0
-0.1
Cib
20
Input and Output
Capacitance vs. Reverse Bias Voltage
-1
Collector Current,I
CBO
(nA)
Base-Emitter Voltage, V
BE(SAT)
(V)
-0.1
-0.01
25
發
FOR
Cob
行
ISSUE
50
75
100 125
Ambient Temperature, T
A
(℃)
-1
-10
-50
文 件
Bias Voltage (V)
心
管
理
中
Reverse
UTC
Doc.Control
Center
JUL 17.2007
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-053.D