2N4403
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Device Dissipation
Derate above 25℃
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃, unless otherwise specified)
RATINGS
UNIT
-40
V
-40
V
-5
V
-600
mA
625
mW
P
C
5.0
mW/℃
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
cycle operations.
THERMAL DATA
(Ta=25℃, unless otherwise specified)
CHARACTERISTIC
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
200
83.3
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Breakdown
BV
CEO
I
C
=-1mA, I
B
=0
Voltage (Note)
Collector-Base Breakdown Voltage BV
CBO
Ic=-0.1mA, I
E
=0
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=-0.1mA, I
C
=0
Collector Cut-off Current
I
CEX
V
CE
=-35V, V
EB
=-0.4V
Base Cut-off Current
I
BEX
V
CE
=-35V, V
BE
=-0.4V
ON CHARACTERISTICS*
h
FE1
V
CE
=-1V,I
C
=-0.1mA
h
FE2
V
CE
=-1V,I
C
=-1mA
DC Current Gain
h
FE3
V
CE
=-1V,I
C
=-10mA
h
FE4
V
CE
=-2V, I
C
=-150mA (Note)
h
FE5
V
CE
=-2V, I
C
=-500mA (Note)
V
CE(SAT1)
I
C
=-150mA, I
B
=-15mA
Collector-Emitter Saturation
Voltage
V
CE(SAT2
) I
C
=-500mA, I
B
=-50mA
V
BE(SAT1)
I
C
=-150mA, I
B
=-15mA(Note)
Base-Emitter Saturation Voltage
V
BE(SAT2
) I
C
=-500mA, I
B
=-50mA
MIN
-40
-40
-5
-0.1
-0.1
30
60
100
100
20
TYP
MAX
UNIT
V
V
V
µA
µA
300
-0.4
-0.75
-0.95
-1.3
V
V
V
V
MHz
pF
pF
kΩ
×10
-4
µmbos
ns
ns
ns
ns
2 of 5
QW-R201-053.D
-0.75
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
f
T
V
CE
=-10V, I
C
=-20mA, f=100MHz
200
Collector-Base Capacitance
Ccb
V
CB
=-10V, I
E
=0, f=140kHz
8.5
Emitter-Base Capacitance
Ceb
V
BE
=-0.5V, I
C
=0, f=140kHz
30
Input Impedance
h
IE
V
CE
=-10V, I
C
=-1mA, f=1kHz
1.5
15
Voltage Feedback Ratio
h
RE
V
CE
=-10V, I
C
=-1mA, f=1kHz
0.1
8
Small-Signal Current Gain
h
FE
V
CE
=-10V, I
C
=-1mA, f=1kHz
60
500
ＦＯＲ ＩＳＳＵＥ
Output Admittance
h
OE
V
CE
=-10V, I
C
=-1mA, f=1kHz
1.0
100
JUL 17.2007
SWITCHING CHARACTERISTICS
Delay Time
t
D
文 件 管
理
中
15
心
V
CC
=-30V, I
C
=-150mA I
B1
=-15mA
Rise Time
t
R
20
UTC
Doc.Control
Center
V
CC
=-30V, I
C
=-150mA
Storage Time
t
S
225
I
B1
= I
B2
=-15mA
30
Fall Time
t
F
Note: Pulse test: Pulse Width≤300µs, Duty Cycle≤2%
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行
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