2N40G-TA3-T 参数 Datasheet PDF下载

2N40

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V

DSS

400

V

Gate-Source Voltage

V

GSS

±30

V

Continuous

I

D

2

A

Drain Current

7

A

Pulsed

I

DM

Avalanche Current

I

AR

2.5

A

Single Pulsed Avalanche Energy

E

AS

100

mJ

Power Dissipation

P

D

25

W

Linear Derating Factor

△

P

D

/

△

T

mb

0.2

W/°C

Junction Temperature

T

J

150

°C

Storage Temperature

T

STG

-55 ~ 150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θ

JA

θ

JC

RATINGS

62.5

5

UNIT

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

(T

J

=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250µA, V

GS

=0V

Breakdown Voltage Temperature

△

BV

DSS

/

△

T

J

V

DS

=V

GS

, I

D

=250µA

Coefficient

Drain-Source Leakage Current

I

DSS

V

DS

=400V, V

GS

=0V

Forward

V

GS

=+30V, V

DS

=0V

Gate- Source Leakage Current

I

GSS

Reverse

V

GS

=-30V, V

DS

=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V

GS(TH)

V

DS

=V

GS

, I

D

=250µA

Static Drain-Source On-State Resistance

R

DS(ON)

V

GS

=10V, I

D

=1.25A

DYNAMIC PARAMETERS

Input Capacitance

C

ISS

V

GS

=0V, V

DS

=25V, f=1.0MHz

Output Capacitance

C

OSS

Reverse Transfer Capacitance

C

RSS

SWITCHING PARAMETERS

Total Gate Charge

Q

G(TOT)

V

GS

=10V, V

DS

=320V, I

D

=2.5A

Gate to Source Charge

Q

GS

Gate to Drain Charge

Q

GD

Turn-ON Delay Time

t

D(ON)

V

DD

=200V, I

D

=2.5A, R

G

=24Ω,

Rise Time

t

R

R

D

=78

Ω

Turn-OFF Delay Time

t

D(OFF)

Fall-Time

t

F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

I

S

T

C

=25°C

Maximum Body-Diode Pulsed Current

I

SM

Drain-Source Diode Forward Voltage

V

SD

I

S

=2.5A, V

GS

=0V

Body Diode Reverse Recovery Time

t

rr

I

S

=2.5A, V

GS

=0V, dI/dt=100A/µs

Body Diode Reverse Recovery Charge

Q

RR

MIN TYP MAX UNIT

400

0.45

V

V/°C

1

25

µA

+10 +200 nA

-10 -200 nA

2.0

3.0

240

44

26

20

2

8

10

25

46

25

25

3

12

4.0

3.4

V

Ω

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

A

A

V

ns

µC

2.5

10

1.2

200

2.0

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www.unisonic.com.tw

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