2N3904
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
40
V
Emitter-Base Voltage
V
EBO
6
V
Collector Current
I
C
200
mA
Collector Dissipation
P
C
625
mW
Junction Temperature
T
J
150
°С
Operating and Storage Temperature
T
STG
-55 ~ +150
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°С, unless otherwise specified)
SYMBOL
TEST CONDITIONS
BV
CBO
I
C
=10μA, I
E
=0
BV
CEO
I
C
=1mA,I
B
=0 (Note)
BV
EBO
I
E
=10μA, I
C
=0
V
CE(SAT)1
I
C
=10mA, I
B
=1mA
V
CE(SAT)2
I
C
=50mA, I
B
=5mA
V
BE(SAT)1
I
C
=10mA, I
B
=1mA
V
BE(SAT)2
I
C
=50mA, I
B
=5mA
I
CBO
V
CE
=30V, V
EB
=3V
I
BL
V
CE
=30V, V
EB
=3V
V
CE
=1V, I
C
=0.1mA
h
FE1
h
FE2
V
CE
=1V, I
C
=1mA
DC Current Gain (note)
h
FE3
V
CE
=1V, I
C
=10mA
h
FE4
V
CE
=1V, I
C
=50mA
h
FE5
V
CE
=1V, I
C
=100mA
Current Gain Bandwidth Product
f
T
V
CE
=20V, I
C
=10mA, f=100MHz
Output Capacitance
C
OB
V
CB
=5V, I
E
=0, f=1MHz
Turn on Time
t
ON
V
CC
=3V,V
BE
=0.5V,I
C
=10mA, I
B
1=1mA
Turn off Time
t
OFF
I
B
1=1
B
2=1mA
Note: Pulse test: Pulse Width≦300μs, Duty Cycle≦2%
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
(Note)
Base-Emitter Saturation Voltage
(Note)
Collector Cut-off Current
Base Cut-off Current
MIN TYP MAX UNIT
60
V
40
V
6
V
0.2
V
0.3
V
0.65
0.85 V
0.95 V
50
nA
50
nA
40
70
100
300
60
30
300
MHz
4
pF
70
ns
250 ns
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-027, D
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