2N3906
PNP EPITAXIAL PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATING ( TA=25°С, unless otherwise specified )
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
IC
RATINGS
-40
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-40
V
-5
V
-200
mA
mA
mW
°С
Base Current
IB
-50
Collector dissipation
Junction Temperature
Operating Temperature
Storage Temperature
PC
625
TJ
125
TOPR
TSTG
-20 ~ +85
-40 ~ +150
°С
°С
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
ICEX
TEST CONDITIONS
VCE=-30V, VEB=-3V
VCE=-30V, VEB=-3V
MIN TYP MAX UNIT
Collector Cut-Off Current
-50
-50
nA
nA
V
Base Cut-Off Current
IBL
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
VCBO IC=-10μA, IE=0
VCEO IC=-1mA, IB=0 (Note)
VEBO IE=-10μA, IC=0
-40
-40
-6
V
V
hFE1
hFE2
hFE3
hFE4
hFE5
VCE=-1V, IC=-0.1mA
VCE=-1V, IC=-1mA
VCE=-1V, IC=-10mA
VCE=-1V, IC=-50mA
VCE=-1V, IC=-100mA
60
80
DC Current Gain (Note)
100
60
300
30
VCE(SAT)1 IC=-10mA, IB=-1mA
VCE(SAT)2 IC=-50mA, IB=-5mA
VBE(SAT)1 IC=-10mA, IB=-1mA
VBE(SAT)2 IC=-50mA, IB=-5mA
-0.25
-0.4
Collector-Emitter Saturation Voltage
(Note)
V
V
-0.65
250
-0.85
-0.95
Base-Emitter Saturation Voltage
Transition Voltage
Output Capacitance
Turn On Time
fT
VCE=-20V, IC=-10mA, f=100MHz
MHz
pF
COB
tON
VCB=-5V, IE=0, f=1MHz
4.5
70
VCC=-3V, VBE=-0.5V, IC=-10mA, IB1=-1mA
IB1=1B2=-1mA
ns
Turn Off Time
tOFF
300
ns
Note: Pulse test: PW<=300μs, Duty Cycle<=2%
UNISONIC TECHNOLOGIES CO., LTD
2 of 3
QW-R201-028, C
www.unisonic.com.tw
UTC [ Unisonic Technologies ]
