2N3772
SILICON NPN TRANSISTOR
ABSOLUTE MAXIMUM RATING
(T
A
=25℃, unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
Collector-Base Voltage
V
CBO
100
Collector-Emitter Voltage
V
CEO
60
Emitter-Base Voltage
V
EBO
7
Collector-Emitter Voltage
V
CEV
80
Collector Current
I
C
30
Collector Peak Current (Note 1)
I
CM
30
Base Current
I
B
5
Base Peak Current (Note 1)
I
BM
15
Power Dissipation (T
A
=25℃)
P
D
150
Junction Temperature
T
J
150
Storage Temperature
T
STG
-55 ~ +150
Note 1. Pulse Test: P
W
<=300μs, Duty Cycle<=2%
2. Absolute maximum ratings are those values beyond which the device could be permanently
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
UNIT
V
V
V
V
A
A
A
A
W
℃
℃
damaged.
ELECTRICAL CHARACTERISTICS
(T
A
=25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
ON CHARACTERISTICS
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
SYMBOL
V
CEX(SUS)
V
CER(SUS)
V
CEO(SUS)
I
CEO
I
CEX
I
CBO
I
EBO
h
FE
V
CE(SAT)
TEST CONDITIONS
I
C
=0.2A,V
BE(OFF)
=1.5V,R
BE
=100Ω
I
C
=0.2A, R
BE
=100Ω
I
C
=0.2A, I
B
=0
V
CE
=50V,I
B
=0
V
CE
=100V, V
BE(OFF)
=1.5V.
V
CE
=30V, V
BE(OFF)
=1.5V, T
A
=150℃
V
CE
=50V, I
E
=0
V
BE
=7V, I
C
=0
I
C
=10A,V
CE
=4V
I
C
=20A, V
CE
=4V
I
C
=10A, I
B
=1.5A
I
C
=20A, I
B
=4A
I
C
=10A, V
CE
=4V
MIN TYP MAX UNIT
80
70
60
10
5
10
5
5
15
5
60
1.4
4.0
2.2
2.5
0.2
40
V
V
A
MHz
V
V
V
mA
mA
mA
mA
Base-Emitter On Voltage
V
BE(ON)
SECOND BREAKDOWN
Second Breakdown Collector with Base
I
S
/b
V
CE
=60V, T=1.0s, Non-repetitive
Forward Biased
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
I
C
=1A, V
CE
=4V, f=50kHz
Small-Signal Current Gain
h
FE
I
C
=1A, V
CE
=4V, f=1kHz
Note: Pulse Test: P
W
<=300μs, Duty Cycle<=2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R205-002,Ba
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