25N10
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain Source Voltage
Gate Source Voltage
Preliminary
Power MOSFET
SYMBOL
RATINGS
UNIT
V
DSS
100
V
V
GSS
±20
V
T
C
=25°C
I
D
23
A
Continuous Drain Current (V
GS
=10V)
T
C
= 100°C
I
D
14.6
A
Pulsed Drain Current (Note 2)
I
DM
80
A
Total Power Dissipation
(T
C
=25°C)
P
D
41
W
Operating Junction Temperature
T
J
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by max. junction temperature
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
100
3
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=1mA
MIN
100
0.14
25
100
±100
2
14
1060 1700
270
8
1.5
2.3
19
5
6
10
28
17
2
30
4
80
TYP MAX UNIT
V
V/°C
µA
µA
nA
V
mΩ
S
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
V
ns
nC
ΔBV
DSS
/ΔT
J
Reference to 25°C , I
D
=1mA
I
DSS
V
DS
=100V, V
GS
=0V, T
J
=25°C
V
DS
=80V, V
GS
=0V,T
J
=150°C
V
GS
=±20V
Gate-Source Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance (Note)
R
DS(ON)
V
GS
=10V, I
D
=16A
Forward Transconductance
g
FS
V
DS
=10V, I
D
=16A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
Gate Resistance
R
G
f=1.0MHz
SWITCHING PARAMETERS
Total Gate Charge (Note)
Q
G
V
GS
=10V, V
DS
=80V, I
D
=16A
Gate Source Charge
Q
GS
Gate Drain Charge
Q
GD
1
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=50V, I
D
=16A, R
G
=3.3Ω,
V
GS
=10V, R
D
=3.125Ω
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note)
V
SD
I
S
=16A, V
GS
=0V
Reverse Recovery Time
t
RR
=16A,V
GS
=0V,
I
S
dI/dt=100A/µs
Reverse Recovery Charge
Q
RR
Note: Pulse Test : Pulse width
≤
300μs, Duty cycle
≤
2%
1.3
90
380
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-448.a
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