25N06
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current (V
GS
=0)
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
I
D
=250µA, V
GS
=0V
V
DS
=Max Rating
V
DS
= Max Rating×0.8, T
C
=125°C
V
GS
=±20V
MIN TYP MAX UNIT
60
1
10
±100
2
25
7
2.9
4
0.048 0.065
11
700
320
90
26
8
9
30
90
80
80
900
450
150
40
V
µA
nA
V
Ω
A
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
A
A
Gate- Source Leakage Current (V
DS
=0)
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=12.5A
On State Drain Current
I
D(on)
V
DS
>I
D(on)
×R
DS(ON)MAX
, V
GS
=10V
Forward Transconductance (Note 1)
g
FS
V
DS
>I
D(on)
×R
DS(ON)MAX
, I
D
=12.5A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DD
=40V, V
GS
=10V, I
D
=25A
Gate to Source Charge
Q
GS
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
V
DD
=30V, I
D
=3A, R
G
=50Ω,
V
GS
=10V
Rise Time
t
R
Turn-OFF Delay Time
t
D(OFF)
V
DD
=40V, I
D
=25A, R
G
=50Ω,
V
GS
=10V
Fall-Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
I
SD
=25A, V
GS
=0V (Note 1)
Source-Drain Current
I
SD
Source-Drain Current (Pulsed) (Note 2)
I
SDM
Note: 1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%.
2. Pulse width limited by safe operating area
45
130
120
120
1.5
25
100
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-450.b
UTC-IC [ UNISONIC TECHNOLOGIES ]
