25N06
PARAMETER
Drain-Source Voltage (V
GS
=0)
Drain-Gate Voltage (R
GS
=20kΩ)
Gate-Source Voltage
Drain Current (Continuous)
T
C
=25°C
T
C
=100°C
Preliminary
SYMBOL
V
DS
V
DGR
V
GS
I
D
RATINGS
60
60
± 20
25
17
100
Power MOSFET
UNIT
V
V
V
A
A
A
ABSOLUTE MAXIMUM RATINGS
Drain Current (Pulsed) (Note 2)
I
DM
Single Pulse Avalanche Energy
E
AS
100
mJ
(starting T
J
=25°C, I
D
=25A, V
DD
=25 V)
TO-220
90
Power Dissipation at T
C
=25°C
P
D
W
TO-252
41
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by safe operating area
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-252
TO-220
TO-252
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
100
1.57
3
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-450.b
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