22N65
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
650
V
Gate-Source Voltage
V
GSS
±30
V
Avalanche Current
I
AR
22
A
Continuous Drain Current
I
D
22
A
Pulsed Drain Current (Note 1)
I
DM
88
A
Single Pulsed
E
AS
380
mJ
Avalanche Energy
Repetitive
E
AR
37
mJ
Peak Diode Recovery dv/dt (Note 2)
dv/dt
18
V/ns
Power Dissipation
P
D
370
W
Junction Temperature
T
J
150
°C
Operating Temperature
T
OPR
-55 ~ +150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. I
SD
≤
22A, di/dt
≤540
A/μs, V
DD
≤
V
(BR)DSS
, T
J
≤150°C.
3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
40
0.34
UNIT
°C /W
°C /W
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, L = 1.5mH, R
G
=25Ω, I
AS
= 22A. Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=250µA
Drain-Source Leakage Current
I
DSS
V
DS
=650V, V
GS
=0V
Gate- Source Leakage Current
I
GSS
V
DS
=0V, V
GS
=±30V
Breakdown Voltage Temperature
I
D
=1mA,
ΔBV
DSS
/ΔT
J
Coefficient
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=10V, I
D
=13A (Note 2)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=300V, I
D
=22A, R
G
=6.2Ω
V
GS
=10V (Note 2)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall-Time
t
F
Total Gate Charge
Q
G
V
DS
=480V, V
GS
=10V, I
D
=22A
Gate Source Charge
Q
GS
(Note 2)
Gate Drain Charge
Q
GD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=22A
Continuous Source Current
I
S
(Body Diode) (Note 1)
Pulsed Source Current (Body Diode)
I
SM
Reverse Recovery Time
t
RR
I
S
=22A,
di/dt=100A/μs (Note 2)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse Width
≤
300 s, Duty Cycle
≤
2%.
MIN
650
50
±100
0.30
2.0
0.3
3570
350
36
26
99
48
37
150
45
76
1.5
22
590
7.2
88
890
11
4.0
0.35
TYP
MAX UNIT
V
µA
nA
V/°C
V
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
A
A
ns
µC
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