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22N60L-T47-T 参数 Datasheet PDF下载

22N60L-T47-T图片预览
型号: 22N60L-T47-T
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET POWER MOSFET]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲局域网
文件页数/大小: 6 页 / 236 K
品牌: UTC-IC [ UNISONIC TECHNOLOGIES ]
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22N60
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
S
=22A
Continuous Source Current
I
S
(Body Diode) (Note 1)
Pulsed Source Current (Body Diode)
I
SM
Reverse Recovery Time
t
RR
I
S
=22A,
di/dt=100A/μs(Note 4)
Reverse Recovery Charge
Q
RR
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. T
J
= 25°C, L = 1.5mH, R
G
=25Ω, I
AS
= 22A
3. I
SD
22A, di/dt
≤540
A/μs, V
DD
V
(BR)DSS
, T
J
≤150°C.
4. Pulse Width
300 s, Duty Cycle
2%.
MIN
Power MOSFET
TYP
MAX UNIT
1.5
22
V
A
A
ns
µC
590
7.2
88
890
11
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-216.E