22N20L-TN3-T 参数 Datasheet PDF下载

22N20

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

V

DSS

200

V

Gate-Source Voltage

V

GSS

±30

V

I

D

22

A

Continuous (T

C

=25°C)

Drain Current

Pulsed (Note 2)

I

DM

88

A

Avalanche Energy Single Pulsed (Note 3)

E

AS

250

mJ

192

TO-220

W

Power Dissipation (T

C

=25°C)

TO-252

83

P

D

TO-220

1.53

Derate above 25°C

W/°C

TO-252

0.67

Junction Temperature

T

J

+150

°C

Storage Temperature

T

STG

-55~+150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L =0.85mH, I

AS

= 21A, V

DD

= 50V, R

G

= 25Ω, Starting T

J

= 25°C

THERMAL DATA

PARAMETER

Junction to Ambient

Junction to Case

TO-220

TO-252

TO-220

TO-252

SYMBOL

θ

JA

θ

JC

RATINGS

62.5

110

0.65

1.5

UNIT

°C/W

°C/W

ELECTRICAL CHARACTERISTICS

(T

C

=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BV

DSS

I

D

=250µA, V

GS

=0V

Breakdown Voltage Temperature Coefficient

△

BV

DSS

/

△

T

J

Reference to 25°C, I

D

=250µA

V

DS

=200V, V

GS

=0V

Drain-Source Leakage Current

I

DSS

V

DS

=160V, T

C

=125°C

Forward

V

GS

=+30V, V

DS

=0V

Gate- Source Leakage Current

I

GSS

Reverse

V

GS

=-30V, V

DS

=0V

ON CHARACTERISTICS

Gate Threshold Voltage

V

GS(TH)

V

DS

=V

GS

, I

D

=250µA

Static Drain-Source On-State Resistance

R

DS(ON)

V

GS

=10V, I

D

=11A

DYNAMIC PARAMETERS

Input Capacitance

C

ISS

V

GS

=0V, V

DS

=25V, f=1.0MHz

Output Capacitance

C

OSS

Reverse Transfer Capacitance

C

RSS

SWITCHING PARAMETERS

Total Gate Charge

Q

G

V

GS

=10V, V

DS

=160V, I

D

=22A

Gate to Source Charge

Q

GS

(Note 1, 2)

Gate to Drain Charge

Q

GD

Turn-ON Delay Time

t

D(ON)

Rise Time

t

R

V

DD

=100V, I

D

=22A, R

G

=25Ω

(Note 1, 2)

Turn-OFF Delay Time

t

D(OFF)

Fall-Time

t

F

MIN TYP MAX UNIT

200

0.25

1

10

+100

-100

3.0

5.0

0.12 0.14

1700 2200

220 290

30

40

27

5.8

11.2

35

300

130

180

35

V

V/°C

µA

nA

nA

V

Ω

pF

pF

pF

nC

nC

nC

ns

ns

ns

ns

80

610

270

370

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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