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20N60 参数 Datasheet PDF下载

20N60图片预览
型号: 20N60
PDF下载: 下载PDF文件 查看货源
内容描述: 20A , 600V N沟道功率MOSFET [20A, 600V N-CHANNEL POWER MOSFET]
分类和应用:
文件页数/大小: 3 页 / 171 K
品牌: UTC [ Unisonic Technologies ]
 浏览型号20N60的Datasheet PDF文件第1页浏览型号20N60的Datasheet PDF文件第2页  
20N60  
Power MOSFET  
„
TYPICAL CHARACTERISTICS  
Drain-Source On-State Resistance  
Characteristics  
20  
18  
16  
14  
12  
10  
VGS=10V, ID=14A  
VGS=10V, ID=20A  
8
6
4
VGS=10V, ID=10A  
2
0
0
1
2
3
4
5
6
7
8
Drain to Source Voltage, VDS (V)  
UTC assumes no responsibility for equipment failures that result from using products at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  
other parameters) listed in products specifications of any and all UTC products described or contained  
herein. UTC products are not designed for use in life support appliances, devices or systems where  
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in  
whole or in part is prohibited without the prior written consent of the copyright owner. The information  
presented in this document does not form part of any quotation or contract, is believed to be accurate  
and reliable and may be changed without notice.  
UNISONIC TECHNOLOGIES CO., LTD  
3 of 3  
QW-R502-587.E  
www.unisonic.com.tw