1N90
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
MIN
900
1.0
10
100
100
-100
3.0
10.3
0.75
150
20
2.7
5.5
1.1
3.3
10
25
15
25
5.0
16.0
TYP
MAX
UNIT
V
V/°C
µA
µA
nA
nA
V
Ω
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
μC
V
GS
=0V, I
D
=250µA
I
D
=250μA,
Breakdown Voltage Temperature Coefficient
ΔBV
DSS
/ΔT
J
Referenced to 25°C
V
DS
=900V, V
GS
=0V
Drain-Source Leakage Current
I
DSS
V
DS
=640V, T
C
=125°C
Forward
V
DS
=0V ,V
GS
=30V
Gate-Source Leakage Current
I
GSS
Reverse
V
DS
=0V ,V
GS
=-30V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Drain-Source On-State Resistance
R
DS(ON)
V
GS
=10V, I
D
=0.5A
Forward Transconductance
g
FS
V
DS
=50V, I
D
=0.5A (Note 4)
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
DS
=25V,V
GS
=0V,f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
DS
=640V, V
GS
=10V, I
D
=1.0A
Gate-Source Charge
Q
GS
(Note 4,5)
Gate-Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Turn-ON Rise Time
t
R
V
DD
=400V, I
D
=1.0A, R
G
=25Ω
(Note 4,5)
Turn-OFF Delay Time
t
D(OFF)
Turn-OFF Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
I
S
Maximum Body-Diode Pulsed Current
I
SM
Drain-Source Diode Forward Voltage
V
SD
I
S
=1.0A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
V
GS
=0V, I
S
=1.0A,
dI
F
/dt=100A/μs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L=170mH, I
AS
=1.0A, V
DD
= 50V, R
G
=25Ω, Starting T
J
=25°C
3. I
SD
≤1.0A,
di/dt
≤200A/μs,
V
DD
≤BV
DSS
, Starting T
J
=25°C
4. Pulse Test: Pulse width
≤
300µs, Duty cycle
≤
2%
5. Essentially independent of operating temperature
195
26
3.5
7.2
30
60
40
60
1.0
4.0
1.4
300
0.6
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R502-496.b
UTC-IC [ UNISONIC TECHNOLOGIES ]
