1N70
TYPICAL CHARACTERISTICS
Output Characteristics
V
GS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
Bottorm:5.5V
Top:
Power MOSFET
Transfer Characteristics
V
DS
=50V
250μs Pulse Test
10
0
10
0
125℃
25℃
-40℃
10
-1
10
-2
10
-1
10
0
250μs Pulse Test
T
C
=25℃
10
1
10
-1
2
4
6
8
10
Drain-Source Voltage, V
DS
(V)
Gate-Source Voltage, V
GS
(V)
On-Resistance vs. Drain Current
Drain-Source On-Resistance, R
DS(ON)
(Ω)
30
25
20
15
10
5
0
T
J
=25℃
V
GS
=10V
V
GS
=20V
Reverse Drain Current, I
DR
(A)
Source- Drain Diode Forward Voltage
V
GS
=0V
250μs Pulse Test
10
0
125℃
25℃
0.0
0.5
1.0
1.5
2.0
2.5
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain Current, I
D
(A)
Source-Drain Voltage, V
SD
(V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate-Source Voltage, V
GS
(V)
Capacitance (pF)
6 of 8
QW-R502-171,C
UTC-IC [ UNISONIC TECHNOLOGIES ]
