1N65
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Single Pulsed (Note 3)
Avalanche Energy
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
SOT-223
TO-251/ TO-252
TO-220
Power Dissipation
TO-220F
TO-92(T
A
=25℃)
SYMBOL
V
DSS
V
GSS
I
AR
I
D
I
DM
E
AS
E
AR
dv/dt
Power MOSFET
RATINGS
UNIT
650
V
±30
V
1.2
A
1.2
A
4.8
A
50
mJ
4.0
mJ
4.5
V/ns
1
W
28
W
40
W
P
D
21
W
1
W
TO-126
12.5
W
Junction Temperature
T
J
+150
℃
℃
Operating Temperature
T
OPR
-55 ~ +150
Storage Temperature
T
STG
-55 ~ +150
℃
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L = 60mH, I
AS
= 1A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25°C
4. I
SD
≤
1.2A, di/dt
≤
200A/μs, V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL DATA
PARAMETER
SOT-223
TO-251/ TO-252
TO-220/ TO-220F
Junction to Ambient
TO-92
TO-126
SOT-223
TO-251/ TO-252
TO-220
TO-220F
TO-126
SYMBOL
RATINGS
150
110
62.5
140
132
14
4.53
3.13
5.95
10
UNIT
θ
JA
℃/W
Junction to Case
θ
Jc
℃/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-579.B
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