1N65A
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified.)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
BV
DSS
I
DSS
TEST CONDITIONS
Power MOSFET
MIN TYP MAX UNIT
V
GS
= 0V, I
D
= 250μA
650
V
V
DS
= 650V, V
GS
= 0V
10
μA
100 nA
Forward
V
GS
= 20V, V
DS
= 0V
Gate-Source Leakage Current
I
GSS
Reverse
V
GS
= -20V, V
DS
= 0V
-100 nA
Breakdown Voltage Temperature Coefficient
△BV
DSS
/
△
T
J
I
D
=250mA,referenced to 25°C
0.4
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
= V
GS
, I
D
= 250μA
2.0
4.5
V
Static Drain-Source On-State Resistance
R
DS(ON)
V
GS
= 10V, I
D
= 0.5A
11.5 15.5
Ω
DYNAMIC CHARACTERISTICS
100 pF
Input Capacitance
C
ISS
V
DS
=25V, V
GS
=0V,
Output Capacitance
C
OSS
20
pF
f=1MHz
Reverse Transfer Capacitance
C
RSS
3
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t
D (ON)
12
34
ns
Turn-On Rise Time
t
R
11
32
ns
V
DD
=325V, I
D
=0.5A,
R
G
=5Ω (Note 1,2)
Turn-Off Delay Time
t
D (OFF)
40
90
ns
Turn-Off Fall Time
t
F
18
46
ns
Total Gate Charge
Q
G
8
10
nC
V
DS
=520V, V
GS
=10V,
Gate-Source Charge
Q
GS
1.8
nC
I
D
=0.8A (Note 1,2)
Gate-Drain Charge
Q
GD
4.0
nC
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
V
SD
V
GS
=0V, I
SD
= 1.2A
1.6
V
Maximum Continuous Drain-Source Diode
I
S
1.2
A
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
4.8
A
Forward Current
Reverse Recovery Time
t
rr
V
GS
=0V, I
SD
= 1.2A
136
ns
di/dt = 100A/μs
Reverse Recovery Charge
Q
RR
0.3
μC
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 8
QW-R502-584.B
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